ความสามารถ DV/DT สูง 320A การควบคุมเฟส thyristors

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

I_TAV

Mean on-state current

320

A

Sinewave,180° conduction,Tc=84^oC

I_TRMS

RMS value of on-state current

502

A

Nominal value

I_TSM

Peak one cycle surge

(non repetitive) current

7

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

I square t

240

KA²s

8.3 msec and 10.0 msec

I_L

Latching current

700

mA

V_D = 24 V; R_L= 12 ohms

I_H

Holding current

300

mA

V_{D =} 24 V; I = 2.5 A

V_TM

Peak on-state voltage

1.6

V

I_TM = 1005 A

di/dt

Critical rate of rise

of on-state current

non-repetitive

1000

A/ms

Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM

repetitive

-

BLOCKING

V_DRM

V_RRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1000

V

V_DSM

V_RSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1100

V

I_DRM

I_RRM

Repetitive peak off state current Repetitive peak reverse  current

70

mA

T_j = 100 ^oC ,V_RRM V_DRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

T_J=T_Jmax, linear to 80% rated V_DRM

TRIGGEING

P_G(AV)

Average gate power dissipation

3

W

P_GM

Peak gate power dissipation

-

W

I_GM

Peak gate current

6

A

I_GT

Gate trigger current

250

mA

T_C = 25 ^oC

V_GT

Gate trigger voltage

2.5

V

T_C = 25 ^oC

V_GD

Gate non-trigger voltage

0.6

V

T_j = 125 ^oC

V_T0

1.006

V

T_j = 125 ^oC

r_T

0612

mΩ

SWITCHING

t_q

Turn-off time

125

ms

I_TM=320A, T_J=T_Jmax, di/dt=10A/μs,

V_R=100V,dv/dt=50V/μs, Gate 0V 100Ω, t_p=500μs

t_d

Delay time

-

Gate current A, di/dt=40A/μs,

V_d=0.67%V_DRM, T_J=25 ^oC